Kingston ValueRam 4GB DDR3-1333MHz

Features:
JEDEC standard 1.5V (1.425~1.575V) Power Supply
VDDQ = 1.5V (1.425V~1.575V)
667MHz fCK for 1333MB/sec/pin
8 independent internal bank
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85 Degree Celcius, 3.9us at 85Asynchornous Reset
Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
8-bit pre-fetch
Bi-directional Differential Data Strobe
Programmable CAS Latency: 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2. or CL - 1 clock
Burst Length: 8 (Interleave without any limit, sequential with starting address "000" only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]
Internal(self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm +- 1%)
PCB: Height 0.740" (18.75mm) or 1.180" (30.00mm)

Specifications
CL(IDD): 9 cycles
Row Cycle Time (tRCmin): 49.125ns (min)
Refresh to Active/Refresh Command Time (tRFCmin): 260ns (min)
Row Active Time (tRASmin): 36ns (min)
Maximum Operating Power: TBD W
UL Rating: 94V - 0
Operating Temperature: 0 to 85 Degree Celcius
Storage Temperature: -55 to 100 Degree Celcius